Abstract: GaN based nanostructures are the most preferred candidates for applications in optics. Among different nanostructures, quantum dots facilitate the narrowest linewidth, lowest defect incorporation, highest surface-to-volume ratio, negligible piezoelectric polarization, minimum quantum confined Stark effect (QCSE), highest carrier overlap, maximum radiative efficiency, and fastest radiative decay. We shall discuss size-dependent changes in important physical, static, and dynamic optical properties of InGaN nanostructures at different temperatures and excitation power. I shall emphasize different fabrication bottlenecks and solutions to achieve room temperature single photon emission from a top-down fabricated InGaN quantum dot. These single photon sources are on demand, robust, easy to integrate with other components and waveguides, and can be triggered faster as compared to other standard sources of single photons. We shall also discuss the electron spin resonance spectroscopy technique to read spin echo response from Er doped solid state host. The higher spin coherence time of Er paves the pathway to think of a good optical memory.
Bio: Dr. Pratim Kumar Saha is presently working as a postdoctoral scholar at the Pritzker School of Molecular Engineering at the University of Chicago. Before joining Chicago, Dr. Saha completed his PhD from the Department of Electrical Engineering, Indian Institute of Technology Bombay. During PhD, he worked on ultrafast and quantum optical properties of GaN-based quantum dots. Solid-state quantum optics, ultrafast spectroscopy, and nanophotonic devices are his research interests.
The College of Arts